? 2011 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 32 a i dm t c = 25 c, pulse width limited by t jm 96 a i a t c = 25 c 32a e as t c = 25 c3j dv/dt i s i dm , v dd v dss , t j 150 c 50 v/ns p d t c = 25 c 1250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-264) 1.13/10 nm/lb.in. f c mounting force (plus247) 20..120 /4.5..27 n/lb. weight to-264 10 g plus247 6 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 1000 v v gs(th) v ds = v gs , i d = 8ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 2 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 320 m hiperfet tm power mosfets q3-class IXFK32N100Q3 ixfx32n100q3 v dss = 1000v i d25 = 32a r ds(on) 320m t rr 250ns ds100300(02/11) n-channel enhancement mode fast intrinsic rectifier g = gate d = drain s = source tab = drain plus247 (ixfx) tab g d s to-264 (ixfk) s g d tab features z low intrinsic gate resistance z low package inductance z fast intrinsic rectifier z low r ds(on) and q g advantages z high power density z easy to mount z space savings applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z temperature and lighting controls advance technical information
IXFK32N100Q3 ixfx32n100q3 ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 20 32 s c iss 9940 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 766 pf c rss 64 pf r gi gate input resistance 0.15 t d(on) 45 ns t r 15 ns t d(off) 54 ns t f 12 ns q g(on) 195 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 60 nc q gd 78 nc r thjc 0.10 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 32 a i sm repetitive, pulse width limited by t jm 128 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 250 ns q rm 1.2 c i rm 12.3 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) i f = 16a, -di/dt = 100a/ s v r = 100v, v gs = 0v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. terminals: 1 - gate 2 - drain 3 - source plus 247 tm outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain 3 - source 4 - drain millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. to-264 aa outline
? 2011 ixys corporation, all rights reserved IXFK32N100Q3 ixfx32n100q3 fig. 1. output characteristics @ t j = 25oc 0 4 8 12 16 20 24 28 32 012345678910 v ds - volts i d - amperes v gs = 10v 6 v 7 v 8 v fig. 2. extended output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7 v 6 v 8 v fig. 3. output characteristics @ t j = 125oc 0 4 8 12 16 20 24 28 32 0 5 10 15 20 25 v ds - volts i d - amperes 6 v 7v 5v v gs = 10v fig. 4. r ds(on) normalized to i d = 16a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 32a i d = 16a fig. 5. r ds(on) normalized to i d = 16a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 10203040506070 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXFK32N100Q3 ixfx32n100q3 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 45 50 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 90 100 0.30.40.50.60.70.80.91.01.11.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v gs - volts v ds = 500v i d = 16a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1 10 100 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s 1ms r ds(on) limit
? 2011 ixys corporation, all rights reserved ixys ref: f_32n100q3(q8)02-18-11 IXFK32N100Q3 ixfx32n100q3 fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 13. maximum transient thermal impedance aaaaa 0.2
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